Download Solutions Manual to Solid State Electronic Devices, 6th by Ben G. Streetman PDF

By Ben G. Streetman

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96eV _ -5 1 Q . 0731 1 . 6 0 9 - 1 0 ^ - 1 . 4 3photon -^ 17 3 . 6Q-C Prob. 11 Find the photocurrent AI in terms ofin and Ttfor a sample dominate by fa. Ac « q-u n -An = q-n n -g op -T n transit time = x = AI = V L y L L2 -"n v-K L V-A-q-u. n -g 0 -xn V-A-Aa A-L-q-g -xn AR Prob. 12 Find Fp(x) for an exponential excess hole distribution. for 8p » p 0 p(x) - 8p(x) = Ap • e E,-R =kT-ln Ap-e n,- p = n ; • e kT C A = kT In ~\ x L Bi &pe~*/Lp / S1- P Since the excess minority hole concentration is assumed to be small compared to n0 throughout, so no band bending is observable on this scale.

6Q-C Prob. 11 Find the photocurrent AI in terms ofin and Ttfor a sample dominate by fa. Ac « q-u n -An = q-n n -g op -T n transit time = x = AI = V L y L L2 -"n v-K L V-A-q-u. n -g 0 -xn V-A-Aa A-L-q-g -xn AR Prob. 12 Find Fp(x) for an exponential excess hole distribution. for 8p » p 0 p(x) - 8p(x) = Ap • e E,-R =kT-ln Ap-e n,- p = n ; • e kT C A = kT In ~\ x L Bi &pe~*/Lp / S1- P Since the excess minority hole concentration is assumed to be small compared to n0 throughout, so no band bending is observable on this scale.

Find LD and W, leaving Na as a variable. 0 The Debye length varies from 7 to 12 percent of W across this doping range. Prob. 28 For the given symmetric p-n Si junction, find the reverse breakdown voltage. 6-10-19C-1017JT •8 q-N a Prob. 29 The current in a long p+-n diode is tripkd mt t= 0, (a) What i$ the slope of£p(zn = 0) ? The sbpe triples at t = 0 : dl = -qADP dSp dXit *«i«0 The slope h = -31/qADp «R,=0 (h) Rehte V(i = oo) to V(t« 0"). CaU V the voltage before I *= 0, Call F°° the voltage at t = oo.

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